WebAbstract: This paper demonstrates the breakdown voltage characteristics of different edge termination structures including aluminum (Al)-deposited guard ring and Al-deposited … WebAug 10, 2024 · Silicon carbide (SiC) power devices have gradually replaced silicon devices in the field of medium and high voltage because of the wide band gap, high breakdown electric field and high thermal conductivity. Commercial SiC power MOSFET devices mainly include two voltage levels of 650V and 1200V. The terminal structure is mainly based on …
Materials Free Full-Text Theoretical and Experimental Study of …
WebAn optimized linearly graded field limiting ring (LG-FLR) termination structure for high voltage power 4H-SiC diodes has been presented in this paper. Simulated optimized designs were performed to investigate SiC field limiting ring termination, and determine the optimum guard ring spacing for planar diodes. Simulated results show that the LG-FLR … WebMay 17, 2024 · In this Letter, high-performance β-Ga 2 O 3 vertical heterojunction barrier Schottky (HJBS) diodes have been demonstrated together with the investigation of reverse leakage mechanisms. In HJBS configurations, NiO/β-Ga 2 O 3 p-n heterojunctions and p-NiO field limiting rings (FLRs) are implemented by using a reactive sputtering … mankessim senior high school
Blocking capability of planar devices with field limiting rings
WebAug 1, 1983 · The results of breakdown voltage investigations of planar devices with field limiting rings are described. The two-dimensional Poisson equation is solved using the finite difference method. The question of the optimal ring spacings for devices with more than one field ring and the influence of surface charges on the blocking capability are ... WebDec 12, 2024 · In this paper, a 13.4 kV/55 A 4H-silicon carbide (SiC) PiN diode with a better trade-off between blocking voltage, differential on-resistance, and technological process complexity has been successfully developed. A multiple zone gradient modulation field limiting ring (MGM-FLR) for extremely high-power handling applications was applied … WebNov 1, 2024 · The design, fabrication and characterization of a SiC 3300V/30A JBS diode have been presented. The field limiting rings(FLR) termination has been used in the fabrication. Numerical simulations have been performed for the optimal parameters of the FLR technique. A doping of 2.7e15cm−3 and a thickness of 33μm is finally utilized for the … manke timber company inc